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Optimizing curvilinear OPC: Vector-based site and anchor decoupling

Comparative analysis of OPC methodologies: Manhattan OPC, traditional PWL CLOPC, spline PWB CLOPC, and vector-spline PWB CLOPC

As semiconductor technology advances to sub-5 nm nodes, curvilinear mask features are essential for pattern fidelity but challenge traditional OPC methods. Siemens introduces an advanced vector-based site and anchor decoupling framework that independently and dynamically controls OPC fragmentation and optimization. This innovation significantly boosts process window robustness, speeds up mask recipe development and refines EPE management, delivering critical improvements for curvilinear photomask applications within Siemens EDA solutions.

What you’ll learn:

  • Why traditional OPC struggles with curvilinear mask designs.
  • How vector-based site and anchor decoupling works.
  • The benefits of independent fragmentation and anchor control.
  • How Siemens EDA solutions enhance OPC for advanced nodes.

Who should read this:

  • OPC engineers
  • CAD engineers
  • Mask designers
  • Lithography process engineers

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