Parasitic extraction of MIM/MOM capacitor devices in analog/RF designs

The extensive use of MIM/MOM capacitors in analog/RF designs presents parasitic extraction challenges to designers. Understanding best practices and recommended tools for extracting the complex geometries of capacitor devices, as well as the in-context coupling effects for those devices in sensitive analog/RF blocks, enables designers to accurately apply the appropriate extraction process to different parts of the design.

MIM/MOM capacitors in analog/RF designs create parasitic extraction challenges

Capacitors are an integral part of many analog/RF design applications, with MIM and MOM capacitors being widely used. Analog/RF designs generally require very high accuracy and fine control of capacitor values. However, process variations can affect capacitive accuracy and matching requirements, making accurate modeling both essential and more complex. The Calibre xACT platform offers analog/RF designers the fast performance of a rule-based extraction engine, as well as the capacity and performance of a field solver, to extract parasitic capacitance components in an analog/RF design with confidence that all the parasitic effects have been accurately characterized. The flexibility of the Calibre xACT platform provides analog/RF designers the speed they need to meet their delivery schedules, with the assurance that they are delivering designs that will provide the intended performance.