A power module is a high-power switching circuit – used in electric vehicles, renewable energy, photovoltaics, wind, and many more applications – that uses insulated gate bipolar transistors (IGBT) or metal-oxide-semiconductor field-effect transistors as switching elements. This paper discusses the difference in power module simulation using lumped elements and S-Parameters. Using a simple example, it is shown that S-Parameters are the better choice to predict the electrical behavior of a power module. Finally, the paper outlines a verification method suitable for automatic optimization.
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