Examining power cycling effects on IGBT longevity

This paper details its application on four IGBT modules, showcasing insights gained from automated power cycling. Experimental results reveal varying failure modes based on powering strategies, emphasizing the importance of robust testing methodologies for accurate lifetime predictions in power devices.

Revolutionizing power module design: Navigating challenges and maximizing flexibility

As the demand for higher performance in power devices intensifies, manufacturers strive to enhance the power and current capabilities of components like IGBTs, Si and SiC MOSFETs. Innovations, including ceramic substrates and solderless die-attach technologies, are being employed to optimize thermal conductivity and cycling capabilities. Additionally, end users are increasingly involved in designing and manufacturing power modules, leveraging available materials for enhanced mechanical flexibility. However, this trend introduces notable challenges in managing thermal stress and ensuring reliability, especially in critical applications like hybrid and electric vehicles.

Explore further details on the experiments, powering strategies, and their implications for power device reliability in the complete white paper by Siemens Digital Industries Software.